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| JMnic Product Specification Silicon PNP Power Transistors 2SA1146 DESCRIPTION With TO-3P(I) package High power dissipations APPLICATIONS For audio and general purpose amplifier applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Fig.1 simplified outline (TO-3P(I)) and symbol Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC=25ae Open emitter Open base Open collector CONDITIONS VALUE -140 -140 -5 -10 -2 100 150 -55~150 ae ae UNIT V V V A A W JMnic Product Specification Silicon PNP Power Transistors 2SA1146 CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. MAX UNIT SYMBOL V(BR)CEO Collector-emitter breakdown voltage IC=-25mA ,IB=0 -140 V V(BR)EBO VCEsat Emitter-base breakdown voltage IE=-1mA ,IC=0 IC=-5A; IB=-0.5A -5 V Collector-emitter saturation voltage -2.0 V ICBO Collector cut-off current VCB=-140V; IE=0 -10 |I A IEBO Emitter cut-off current VEB=-5V; IC=0 -10 |I A hFE-1 DC current gain IC=-1A ; VCE=-5V 55 160 hFE-2 DC current gain IC=-4A ; VCE=-5V 35 fT Transition frequency IC=-0.5A ; VCE=-10V 70 MHz 2 JMnic Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1146 Fig.2 Outline dimensions(unindicated tolerance:A 0.10 mm) 3 |
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